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IRG4IBC30W

IRG4IBC30W

IRG4IBC30W

Infineon Technologies

IRG4IBC30W datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4IBC30W Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature LOW CONDUCTION LOSS
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Case Connection ISOLATED
Input Type Standard
Power - Max 45W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-220AB
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 17A
Turn On Time 41 ns
Test Condition 480V, 12A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 12A
Turn Off Time-Nom (toff) 300 ns
Gate Charge 51nC
Current - Collector Pulsed (Icm) 92A
Td (on/off) @ 25°C 25ns/99ns
Switching Energy 130μJ (on), 130μJ (off)
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
200 $3.04055 $608.11
IRG4IBC30W Product Details

IRG4IBC30W Description


Insulated Gate Bipolar Transistor



IRG4IBC30W Features


  • lowering of the Eoff parameter by 50%

  • Low conduction losses in IGBTs

  • The design and manufacturing of the most recent generation of IGBTs offers remarkable dependability and narrower parameter distribution.

  • Isolated TO-220 FullpakTM, a standard in the industry



IRG4IBC30W Applications


Switching applications


Related Part Number

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