STH110N10F7-6

new-10%

Manufacturer part number:STH110N10F7-6

Manufacturer:STMicroelectronics

Description:MOSFET N-CH 100V 110A H2PAK-6

Case Package:SOT-23

Datasheet:STH110N10F7-6 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-7, D2Pak (6 Leads + Tab)
Number of Pins	7
Operating Temperature	-55°C~175°C TJ
Packaging	Cut Tape (CT)
Series	DeepGATE™, STripFET™ VII
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Base Part Number	STH110
Power Dissipation-Max	150W Tc
Element Configuration	Single
Turn On Delay Time	25 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	6.5m Ω @ 55A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5117pF @ 50V
Current - Continuous Drain (Id) @ 25°C	110A Tc
Gate Charge (Qg) (Max) @ Vgs	72nC @ 10V
Rise Time	36ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	21 ns
Turn-Off Delay Time	52 ns
Continuous Drain Current (ID)	110A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free