STI23NM60N

new-10%

Manufacturer part number:STI23NM60N

Manufacturer:STMicroelectronics

Description:MOSFET N-CH 600V 19A I2PAK

Case Package:SOT-23

Datasheet:STI23NM60N Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	MDmesh™ II
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	MATTE TIN
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	245
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	STI23N
Pin Count	3
Number of Elements	1
Power Dissipation-Max	150W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	150W
Turn On Delay Time	25 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	180m Ω @ 9.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2050pF @ 50V
Current - Continuous Drain (Id) @ 25°C	19A Tc
Gate Charge (Qg) (Max) @ Vgs	60nC @ 10V
Rise Time	15ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	36 ns
Turn-Off Delay Time	90 ns
Continuous Drain Current (ID)	9.5A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	25V
Drain Current-Max (Abs) (ID)	19A
Drain-source On Resistance-Max	0.18Ohm
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	76A
Avalanche Energy Rating (Eas)	700 mJ
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant