STI35N65M5

new-10%

Manufacturer part number:STI35N65M5

Manufacturer:STMicroelectronics

Description:MOSFET Nchannel 650 V 0.085 Ohm, 27 A, MDmesh

Case Package:SOT-23

Datasheet:STI35N65M5 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	MDmesh™ V
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Base Part Number	STI35N
Pin Count	3
Number of Elements	1
Power Dissipation-Max	160W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	160W
Case Connection	ISOLATED
Turn On Delay Time	60 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	98m Ω @ 13.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3750pF @ 100V
Current - Continuous Drain (Id) @ 25°C	27A Tc
Gate Charge (Qg) (Max) @ Vgs	83nC @ 10V
Rise Time	12ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	16 ns
Turn-Off Delay Time	60 ns
Continuous Drain Current (ID)	27A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	25V
Drain-source On Resistance-Max	0.098Ohm
Drain to Source Breakdown Voltage	650V
Avalanche Energy Rating (Eas)	800 mJ
Height	10.75mm
Length	10.4mm
Width	4.6mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free