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STL15DN4F5

STL15DN4F5

STL15DN4F5

STMicroelectronics

STL15DN4F5 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from STMicroelectronics stock available on our website

SOT-23

STL15DN4F5 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, STripFET™ V
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 9MOhm
Terminal Finish Matte Tin (Sn)
Additional Feature ULTRA LOW-ON RESISTANCE
Subcategory FET General Purpose Power
Max Power Dissipation 60W
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Base Part Number STL15
Pin Count 8
JESD-30 Code R-PDSO-F6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 60W
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1550pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Rise Time 45ns
Drain to Source Voltage (Vdss) 40V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) 60A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 850μm
Length 4.75mm
Width 5.75mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.464590 $1.46459
10 $1.381689 $13.81689
100 $1.303480 $130.348
500 $1.229699 $614.8495
1000 $1.160092 $1160.092
STL15DN4F5 Product Details

STL15DN4F5    Description

 

  The device is a double N-channel power MOSFET developed by STMicroelectronics' STripFET? F5 technology. The device is optimized to achieve extremely low on-resistance, making FOM among the best of its kind.

 

STL15DN4F5  Features


· Designed for automotive applications and

AEC-Q101 qualified

· Extremely low RDS(on)

· Very low gate charge

· Low gate drive power loss

· Wettable flank package


STL15DN4F5     Applications


· Switching applications

 






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