FDS4897AC datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website
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FDS4897AC Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
187mg
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
26MOhm
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
900mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Qualification Status
Not Qualified
Number of Elements
2
Power Dissipation
2W
Turn On Delay Time
8 ns
FET Type
N and P-Channel
Rds On (Max) @ Id, Vgs
26m Ω @ 6.1A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1055pF @ 20V
Current - Continuous Drain (Id) @ 25°C
6.1A 5.2A
Gate Charge (Qg) (Max) @ Vgs
21nC @ 10V
Rise Time
3ns
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Fall Time (Typ)
3 ns
Turn-Off Delay Time
17 ns
Continuous Drain Current (ID)
5.2A
Threshold Voltage
2V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
6.1A
Drain to Source Breakdown Voltage
40V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Height
1.575mm
Length
4.9mm
Width
3.9mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
FDS4897AC Product Details
FDS4897AC Description
These dual N-channel and P-channel MOSFET are manufactured using Fairchild's advanced power channel process, which focuses on minimizing on-resistance while maintaining excellent switching performance.
FDS4897AC Features
Q1:N-Channel
Max fps(on)=26 mΩat VGs=10 V,lD=6.1 A
Max rps(on)=31 mΩ at VGs=4.5Vlo=5.6A Q2: P-Channel