STL23NS3LLH7 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STL23NS3LLH7 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Series
STripFET™ H7
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STL23
JESD-30 Code
R-PDSO-F5
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2.9W Ta 50W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
3.7m Ω @ 11.5A, 10V
Vgs(th) (Max) @ Id
2.3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
2100pF @ 15V
Current - Continuous Drain (Id) @ 25°C
92A Tc
Gate Charge (Qg) (Max) @ Vgs
13.7nC @ 4.5V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
92A
Drain-source On Resistance-Max
0.005Ohm
DS Breakdown Voltage-Min
30V
RoHS Status
ROHS3 Compliant
STL23NS3LLH7 Product Details
STL23NS3LLH7 Description
STL23NS3LLH7 is an N-channel Power MOSFET transistor from the manufacturer STMicroelectronics with a voltage of 30V. The STripFET H7 technology with a trench gate structure and incredibly low onresistance is used in this N-channel Power MOSFET. Additionally, the gadget provides incredibly low capacitances for increased switching frequency activities.