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STL4N80K5

STL4N80K5

STL4N80K5

STMicroelectronics

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2.5 Ω @ 1.5A, 10V ±30V 175pF @ 100V 10.5nC @ 10V 8-PowerVDFN

SOT-23

STL4N80K5 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series SuperMESH5™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STL4
Number of Channels 1
Power Dissipation-Max 38W Tc
Element Configuration Single
Power Dissipation 38W
Turn On Delay Time 16.5 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.5 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 175pF @ 100V
Current - Continuous Drain (Id) @ 25°C 2.5A Tc
Gate Charge (Qg) (Max) @ Vgs 10.5nC @ 10V
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 21 ns
Turn-Off Delay Time 36 ns
Continuous Drain Current (ID) 2.5A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 800V
Height 950μm
Length 6.35mm
Width 5.4mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
STL4N80K5 Product Details

STL4N80K5 Description

This very high voltage N-channel Power MOSFET is designed using MDmesh? K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency



STL4N80K5 Features

Industry's lowest RDS(on) x area

Industry's best figure of merit (FoM)

Ultra low gate charge

100% avalanche tested

Zener protected



STL4N80K5 Applications

Switching applications



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