STN2NE10L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STN2NE10L Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
STripFET™
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
LOW THRESHOLD
Subcategory
FET General Purpose Power
Voltage - Rated DC
100V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
1.8A
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
STN2N
Pin Count
4
JESD-30 Code
R-PDSO-G4
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2.5W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
400m Ω @ 1A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
345pF @ 25V
Current - Continuous Drain (Id) @ 25°C
1.8A Tc
Gate Charge (Qg) (Max) @ Vgs
14nC @ 5V
Rise Time
17ns
Drive Voltage (Max Rds On,Min Rds On)
5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
8 ns
Turn-Off Delay Time
22 ns
Continuous Drain Current (ID)
1.8A
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
2A
Drain-source On Resistance-Max
0.45Ohm
Drain to Source Breakdown Voltage
100V
Pulsed Drain Current-Max (IDM)
7.2A
Avalanche Energy Rating (Eas)
20 mJ
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
4,000
$0.38500
$1.54
STN2NE10L Product Details
STN2NE10L Description
STN2NE10L is a 100v STripFET? Power MOSFET. This Power MOSFET STN2NE10L is the latest development of STMicroelectronics' unique "Single Feature Size?" strip-based process. The resulting transistor STN2NE10L shows extremely high packing density for low on-resistance, rugged avalanche characteristics, and less critical alignment steps therefore a remarkable manufacturing reproducibility.