SPD30P06PGBTMA1

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SPD30P06PGBTMA1

Manufacturer part number:SPD30P06PGBTMA1

Manufacturer:Infineon Technologies

Description:SPD30P06PGBTMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:SPD30P06PGBTMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	1999
Series	SIPMOS®
JESD-609 Code	e3
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	125W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	125W
Case Connection	DRAIN
Turn On Delay Time	13 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	75m Ω @ 21.5A, 10V
Vgs(th) (Max) @ Id	4V @ 1.7mA
Halogen Free	Not Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	1535pF @ 25V
Current - Continuous Drain (Id) @ 25°C	30A Tc
Gate Charge (Qg) (Max) @ Vgs	48nC @ 10V
Rise Time	11ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	30A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	-60V
Drain-source On Resistance-Max	0.075Ohm
Avalanche Energy Rating (Eas)	250 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead