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STN3PF06

STN3PF06

STN3PF06

STMicroelectronics

STN3PF06 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STN3PF06 Datasheet

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Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Series STripFET™ II
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Termination SMD/SMT
ECCN Code EAR99
Resistance 220mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE ENERGY RATED
Subcategory Other Transistors
Voltage - Rated DC -60V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -2.5A
[email protected] Reflow Temperature-Max (s) 30
Base Part Number STN3P
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 220m Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 850pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.5A Tc
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Rise Time 40ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 17 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 2.5A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -60V
Dual Supply Voltage 60V
Nominal Vgs 4 V
Height 1.8mm
Length 6.5mm
Width 3.5mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
4,000 $0.42658 $1.70632
STN3PF06 Product Details

STN3PF06 Description


This STN3PF06 Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size?"  strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.



STN3PF06 Features


  • Extremely dv/dt capability

  • Application-oriented characterization

  • 100% avalanche tested


STN3PF06 Applicaitons


  • DC-DC & DC-AC Converters

  • DC Motor control (DISK DRIVES, etc.)


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