STN817A Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 30 @ 1A 2V.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 100mA, 1A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.50MHz is present in the transition frequency.The breakdown input voltage is 80V volts.Collector current can be as low as 1.5A volts at its maximum.

STN817A Features

the DC current gain for this device is 30 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 50MHz

STN817A Applications

There are a lot of STMicroelectronics STN817A applications of single BJT transistors.

• Muting
• Interface
• Driver
• Inverter