SIS472BDN-T1-GE3

new-10%

Manufacturer part number:SIS472BDN-T1-GE3

Manufacturer:Vishay Siliconix

Description:N-CHANNEL 30-V (D-S) MOSFET

Case Package:SOT-23

Datasheet:SIS472BDN-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8
Supplier Device Package	PowerPAK® 1212-8
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	TrenchFET® Gen IV
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	3.2W Ta 19.8W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	7.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1000pF @ 15V
Current - Continuous Drain (Id) @ 25°C	15.3A Ta 38.3A Tc
Gate Charge (Qg) (Max) @ Vgs	21.5nC @ 10V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	+20V, -16V
RoHS Status	ROHS3 Compliant