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STP11NK40ZFP

STP11NK40ZFP

STP11NK40ZFP

STMicroelectronics

MOSFET (Metal Oxide) N-Channel Tube 550m Ω @ 4.5A, 10V ±30V 930pF @ 25V 32nC @ 10V TO-220-3 Full Pack

SOT-23

STP11NK40ZFP Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series SuperMESH™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STP11N
Pin Count 3
Number of Elements 1
Power Dissipation-Max 30W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 30W
Case Connection ISOLATED
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 550m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 930pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Rise Time 20ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 18 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 9A
Threshold Voltage 3.75V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 9A
Drain-source On Resistance-Max 0.55Ohm
Drain to Source Breakdown Voltage 400V
Height 9.3mm
Length 10.4mm
Width 4.6mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $1.03835 $1.03835
STP11NK40ZFP Product Details

STP11NK40ZFP Description


These high-voltage components are Zener-protected N-channel Power MOSFETs created by STMicroelectronics employing SuperMESHTM technology, an improvement of the well-known PowerMESHTM. These devices are made to offer a high level of dv/dt capability for the most demanding applications in addition to a significant reduction in on-resistance.



STP11NK40ZFP Features


  • 100% avalanche tested

  • Gate charge minimized

  • Very low intrinsic capacitance

  • Zener-protected



STP11NK40ZFP Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial

  • Switching applications


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