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STP160N4LF6

STP160N4LF6

STP160N4LF6

STMicroelectronics

STP160N4LF6 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STP160N4LF6 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series DeepGATE™, STripFET™ VI
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STP160
Configuration Single
Power Dissipation-Max 150W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.9m Ω @ 60A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA (Min)
Input Capacitance (Ciss) (Max) @ Vds 8130pF @ 20V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 181nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 120A
RoHS Status ROHS3 Compliant
STP160N4LF6 Product Details

STP160N4LF6 Description


STP160N4LF6 is an N-channel Power MOSFET transistor from the manufacturer STMicroelectronics with a voltage of 40V. This product is an N-channel Power MOSFET made with a new gate structure and the 6th generation of STripFET DeepGATE technology. The Power MOSFET that results has the lowest RDS(on) among all packages.



STP160N4LF6 Features


  • RDS(on) * Qg industry benchmark

  • Extremely low on-resistance RDS(on)

  • Logic level drive

  • High avalanche ruggedness

  • 100% avalanche tested



STP160N4LF6 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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