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STP315N10F7

STP315N10F7

STP315N10F7

STMicroelectronics

MOSFET (Metal Oxide) N-Channel Tube 2.7m Ω @ 60A, 10V ±20V 12800pF @ 25V 180nC @ 10V 100V TO-220-3

SOT-23

STP315N10F7 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 329.988449mg
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series Automotive, AEC-Q101, DeepGATE™, STripFET™ VII
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STP315
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 315W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 62 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.7m Ω @ 60A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 12800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 180A Tc
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Rise Time 108ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 148 ns
Continuous Drain Current (ID) 180A
Threshold Voltage 3.5V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0027Ohm
Pulsed Drain Current-Max (IDM) 720A
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $6.59000 $6.59
50 $5.37260 $268.63
100 $4.92910 $492.91
500 $4.06426 $2032.13
1,000 $3.48768 $3.48768
2,500 $3.33245 $6.6649
STP315N10F7 Product Details

STP315N10F7 Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 12800pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 180A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 148 ns.Peak drain current is 720A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 62 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 3.5V, which means that it will not activate any of its functions when its threshold voltage reaches 3.5V.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

STP315N10F7 Features


a continuous drain current (ID) of 180A
the turn-off delay time is 148 ns
based on its rated peak drain current 720A.
a threshold voltage of 3.5V
a 100V drain to source voltage (Vdss)


STP315N10F7 Applications


There are a lot of STMicroelectronics
STP315N10F7 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies

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