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STP46N60M6

STP46N60M6

STP46N60M6

STMicroelectronics

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 80m Ω @ 18A, 10V ±25V 600V TO-220-3

SOT-23

STP46N60M6 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series MDmesh™ M6
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 250W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 80m Ω @ 18A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250μA
Current - Continuous Drain (Id) @ 25°C 36A Tc
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $6.98000 $6.98
500 $6.9102 $3455.1
1000 $6.8404 $6840.4
1500 $6.7706 $10155.9
2000 $6.7008 $13401.6
2500 $6.631 $16577.5
STP46N60M6 Product Details

STP46N60M6 Description


The most recent improvements to the well-known and consolidated MDmesh family of SJ MOSFETs are incorporated into the new MDmesh M6 technology. With its brand-new M6 technology, STMicroelectronics improves on the previous generation of MDmesh devices by combining great RDS(on) per area improvement with one of the most efficient switching behaviors available, as well as a user-friendly interface for optimal end-application efficiency.



STP46N60M6 Features


  • Reduced switching losses

  • Lower RDS(on) per area vs previous generation

  • Low gate input resistance

  • 100% avalanche tested

  • Zener-protected



STP46N60M6 Applications


  • Switching applications

  • LLC converters

  • Boost PFC converters


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