STP4NB50

new-10%

Manufacturer part number:STP4NB50

Manufacturer:STMicroelectronics

Description:MOSFET N-CH 500V 3.8A TO-220

Case Package:SOT-23

Datasheet:STP4NB50 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	PowerMESH™
JESD-609 Code	e0
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
Subcategory	FET General Purpose Power
Voltage - Rated DC	500V
Technology	MOSFET (Metal Oxide)
Current Rating	3.8A
Base Part Number	STP4N
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Power Dissipation-Max	80W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	80W
Turn On Delay Time	11 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.8 Ω @ 1.9A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	400pF @ 25V
Current - Continuous Drain (Id) @ 25°C	3.8A Tc
Gate Charge (Qg) (Max) @ Vgs	21nC @ 10V
Rise Time	8ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	5 ns
Continuous Drain Current (ID)	3.8A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	15.2A
Avalanche Energy Rating (Eas)	220 mJ
Radiation Hardening	No
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead