STP50NE10

new-10%

Manufacturer part number:STP50NE10

Manufacturer:STMicroelectronics

Description:STP50NE10 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STP50NE10 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Operating Temperature	175°C TJ
Packaging	Tube
Series	STripFET™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Current Rating	50A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STP50N
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Voltage	100V
Power Dissipation-Max	180W Tc
Element Configuration	Single
Current	50A
Operating Mode	ENHANCEMENT MODE
Power Dissipation	180W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	27m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	50A Tc
Gate Charge (Qg) (Max) @ Vgs	166nC @ 10V
Rise Time	135ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	50A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.027Ohm
Drain to Source Breakdown Voltage	100V
Avalanche Energy Rating (Eas)	300 mJ
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead