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STP5NK100Z

STP5NK100Z

STP5NK100Z

STMicroelectronics

STP5NK100Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STP5NK100Z Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series SuperMESH3™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 3.7Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 1kV
Technology MOSFET (Metal Oxide)
Current Rating 3.5A
Base Part Number STP5N
Number of Elements 1
Power Dissipation-Max 125W Tc
Element Configuration Single
Power Dissipation 125W
Turn On Delay Time 22.5 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.7Ohm @ 1.75A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1154pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.5A Tc
Gate Charge (Qg) (Max) @ Vgs 59nC @ 10V
Rise Time 7.7ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 51.5 ns
Continuous Drain Current (ID) 3.5A
Threshold Voltage 3.75V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 1kV
Input Capacitance 1.154nF
Drain to Source Resistance 3.7Ohm
Rds On Max 3.7 Ω
Height 9.15mm
Length 10.4mm
Width 4.6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.51000 $3.51
50 $2.86540 $143.27
100 $2.59730 $259.73
500 $2.06128 $1030.64
1,000 $1.73966 $1.73966
2,500 $1.63246 $3.26492
5,000 $1.57885 $7.89425
STP5NK100Z Product Details

STP5NK100Z Description


STP5NK100Z is a 1000V N-channel SuperMESH3? Power MOSFET. The new SuperMESHTM series of Power MOSFETS is the result of further design improvements on ST's well-established strip-based PowerMESHTM layout. In addition to significantly lower on-resistance, the device offers superior dv/dt capability to ensure optimal performance even in the most demanding applications. The SuperMESHTM STP5NK100Z further complements an already broad range of innovative high-voltage MOSFETs, which includes the revolutionary MDmeshTM products.



STP5NK100Z Features


Extremely high dv/dt capability

100% avalanche tested

Gate charge minimized

Very low intrinsic capacitances

Very good manufacturing repeatability



STP5NK100Z Applications


Rotary Switch

DIP Switch

Limit Switch

Reed Switch

Rocker Switch

Toggle Switch


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