STP60NE06L-16

new-10%

Manufacturer part number:STP60NE06L-16

Manufacturer:STMicroelectronics

Description:MOSFET N-CH 60V 60A TO-220

Case Package:SOT-23

Datasheet:STP60NE06L-16 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Operating Temperature	175°C TJ
Packaging	Tube
Series	STripFET™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	LOW THRESHOLD
Subcategory	FET General Purpose Power
Voltage - Rated DC	60V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Current Rating	60A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STP60N
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	150W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	150W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	14m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4150pF @ 25V
Current - Continuous Drain (Id) @ 25°C	60A Tc
Gate Charge (Qg) (Max) @ Vgs	70nC @ 5V
Rise Time	155ns
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±15V
Fall Time (Typ)	25 ns
Turn-Off Delay Time	125 ns
Continuous Drain Current (ID)	60A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	15V
Drain-source On Resistance-Max	0.016Ohm
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	240A
Avalanche Energy Rating (Eas)	400 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free