STP62NS04Z

new-10%

Manufacturer part number:STP62NS04Z

Manufacturer:STMicroelectronics

Description:MOSFET (Metal Oxide) N-Channel Tube 15m Ω @ 30A, 10V Clamped 1330pF @ 25V 47nC @ 10V TO-220-3

Case Package:SOT-23

Datasheet:STP62NS04Z Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Manufacturer Package Identifier	0015988_Rev_R
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	MESH OVERLAY™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	15MOhm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Current Rating	62A
Base Part Number	STP62N
Pin Count	3
Number of Elements	1
Power Dissipation-Max	110W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	110W
Case Connection	DRAIN
Turn On Delay Time	13 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	15m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1330pF @ 25V
Current - Continuous Drain (Id) @ 25°C	62A Tc
Gate Charge (Qg) (Max) @ Vgs	47nC @ 10V
Rise Time	104ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	Clamped
Fall Time (Typ)	42 ns
Turn-Off Delay Time	41 ns
Continuous Drain Current (ID)	62A
Threshold Voltage	4V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	18V
Drain Current-Max (Abs) (ID)	40A
Drain to Source Breakdown Voltage	33V
Pulsed Drain Current-Max (IDM)	248A
Avalanche Energy Rating (Eas)	500 mJ
Height	15.75mm
Length	10.4mm
Width	4.6mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free