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STP80NF03L-04

STP80NF03L-04

STP80NF03L-04

STMicroelectronics

MOSFET (Metal Oxide) N-Channel Tube 4.5m Ω @ 40A, 10V ±20V 5500pF @ 25V 110nC @ 4.5V TO-220-3

SOT-23

STP80NF03L-04 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 175°C TJ
Packaging Tube
Series STripFET™ II
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 4.5MOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Current Rating 80A
Base Part Number STP80N
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
Turn On Delay Time 30 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.5m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 4.5V
Rise Time 270ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 95 ns
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) 80A
Threshold Voltage 1.5V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Max Junction Temperature (Tj) 175°C
Height 19.68mm
Length 10.4mm
Width 4.6mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.91000 $3.91
50 $3.14580 $157.29
100 $2.86610 $286.61
500 $2.32084 $1160.42
1,000 $1.95734 $1.95734
2,500 $1.85947 $3.71894
5,000 $1.78957 $8.94785
STP80NF03L-04 Product Details

STP80NF03L-04 Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 5500pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 80A.With a drain-source breakdown voltage of 30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 30V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 110 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 30 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.1.5V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

STP80NF03L-04 Features


a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 110 ns
a threshold voltage of 1.5V


STP80NF03L-04 Applications


There are a lot of STMicroelectronics
STP80NF03L-04 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification

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