FDMS8D8N15C

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Manufacturer part number:FDMS8D8N15C

Manufacturer:ON Semiconductor

Description:FDMS8D8N15C datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDMS8D8N15C Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Reach Compliance Code	not_compliant
Power Dissipation-Max	2.7W Ta 132W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	8.8m Ω @ 45A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3600pF @ 75V
Current - Continuous Drain (Id) @ 25°C	12.2A Ta 85A Tc
Gate Charge (Qg) (Max) @ Vgs	50nC @ 10V
Drain to Source Voltage (Vdss)	150V
Drive Voltage (Max Rds On,Min Rds On)	8V 10V
Vgs (Max)	±20V
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$3.84000	$3.84
500	$3.8016	$1900.8
1000	$3.7632	$3763.2
1500	$3.7248	$5587.2
2000	$3.6864	$7372.8
2500	$3.648	$9120

FDMS8D8N15C Description

With a voltage of 30V, the FDMS8D8N15C is an N-channel Power MOSFET from ON Semiconductor. The FDMS8D8N15C has an operating temperature of -55°C to 150°C TJ and maximum power dissipation of 132W Tc. ON Semiconductor's innovative Power Trench process, which includes Shielded Gate technology, is used to make this N-Channel MV MOSFET. With the best-in-class soft body diode, this method has been designed to minimize on-state resistance while maintaining exceptional switching performance.