STS30N3LLH6

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Manufacturer part number:STS30N3LLH6

Manufacturer:STMicroelectronics

Description:STS30N3LLH6 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STS30N3LLH6 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	DeepGATE™, STripFET™ VI
JESD-609 Code	e4
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STS30
Pin Count	8
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.7W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.7W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.4m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4040pF @ 25V
Current - Continuous Drain (Id) @ 25°C	30A Tc
Gate Charge (Qg) (Max) @ Vgs	40nC @ 4.5V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	30A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0035Ohm
DS Breakdown Voltage-Min	30V
Avalanche Energy Rating (Eas)	525 mJ
RoHS Status	ROHS3 Compliant