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STS9NF30L

STS9NF30L

STS9NF30L

STMicroelectronics

MOSFET N-CH 30V 9A 8-SOIC

SOT-23

STS9NF30L Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series STripFET™ II
JESD-609 Code e4
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 9A
[email protected] Reflow Temperature-Max (s) 30
Base Part Number STS9NF
Pin Count 8
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 730pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Gate Charge (Qg) (Max) @ Vgs 12.5nC @ 4.5V
Rise Time 80ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±18V
Fall Time (Typ) 24 ns
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) 9A
Gate to Source Voltage (Vgs) 18V
Drain Current-Max (Abs) (ID) 9A
Drain-source On Resistance-Max 0.035Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 36A
RoHS Status ROHS3 Compliant

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