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STSJ100NH3LL

STSJ100NH3LL

STSJ100NH3LL

STMicroelectronics

STSJ100NH3LL datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STSJ100NH3LL Datasheet

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Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width) Exposed Pad
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series STripFET™ III
JESD-609 Code e4
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 25A
[email protected] Reflow Temperature-Max (s) 30
Base Part Number STSJ100N
Pin Count 8
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3W Ta 70W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 70W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5m Ω @ 12.5A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4450pF @ 25V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 4.5V
Rise Time 50ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 75 ns
Continuous Drain Current (ID) 25A
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 100A
Drain-source On Resistance-Max 0.005Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 400A
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $1.11375 $2.2275
STSJ100NH3LL Product Details

STSJ100NH3LL Description


STSJ100NH3LL is a 30v N-channel STripFET? III MOSFET for DC-DC conversion. The STSJ100NH3LL utilizes the latest advanced design rules of ST?ˉs proprietary STripFET? technology. This process coupled with unique metallization techniques realizes the most advanced low voltage MOSFET in SO-8 ever produced.



STSJ100NH3LL Features


  • Typical RDS(on) = 0.0032? @ 10V

  • Optical RDS(on) x Qg trade-off @ 4.5V

  • Switching losses reduced

  • Low threshold device

  • Improved junction-case thermal resistance



STSJ100NH3LL Applications


  • High-efficiency CPU core DC-DC converters for mobile PCs.

  • Cellular phones 

  • Laptop computers

  • Photovoltaic systems 

  • Wind turbines


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