STSJ100NH3LL datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
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STSJ100NH3LL Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width) Exposed Pad
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
STripFET™ III
JESD-609 Code
e4
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory
FET General Purpose Power
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
25A
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
STSJ100N
Pin Count
8
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
3W Ta 70W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
70W
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
3.5m Ω @ 12.5A, 10V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
4450pF @ 25V
Current - Continuous Drain (Id) @ 25°C
100A Tc
Gate Charge (Qg) (Max) @ Vgs
40nC @ 4.5V
Rise Time
50ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±16V
Fall Time (Typ)
8 ns
Turn-Off Delay Time
75 ns
Continuous Drain Current (ID)
25A
Gate to Source Voltage (Vgs)
16V
Drain Current-Max (Abs) (ID)
100A
Drain-source On Resistance-Max
0.005Ohm
Drain to Source Breakdown Voltage
30V
Pulsed Drain Current-Max (IDM)
400A
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,500
$1.11375
$2.2275
STSJ100NH3LL Product Details
STSJ100NH3LL Description
STSJ100NH3LL is a 30v N-channel STripFET? III MOSFET for DC-DC conversion. The STSJ100NH3LL utilizes the latest advanced design rules of ST?ˉs proprietary STripFET? technology. This process coupled with unique metallization techniques realizes the most advanced low voltage MOSFET in SO-8 ever produced.
STSJ100NH3LL Features
Typical RDS(on) = 0.0032? @ 10V
Optical RDS(on) x Qg trade-off @ 4.5V
Switching losses reduced
Low threshold device
Improved junction-case thermal resistance
STSJ100NH3LL Applications
High-efficiency CPU core DC-DC converters for mobile PCs.