IRLR8103 Description
A previously unheard-of balance between on-resistance and gate charge is achieved by the IRLR8103's use of cutting-edge HEXFET? power MOSFET technology. They are perfect for high efficiency DC-DC converters that power the newest generation of microprocessors due to the decreased conduction and switching losses. The RDS(on), gate charge, and Cdv/dt-induced turn-on immunity parameters that are crucial in synchronous buck converters have all been optimized and rigorously tested for in both the IRLR8103 and IRLR8503. For synchronous FET applications, the IRLR8103 offers particularly low RDS(on) and strong Cdv/dt immunity. For decreased losses in control FET applications, the IRLR8503 provides an incredibly low combination of Qsw & RDS(on). The package is made for wave, convection, vapor phase, and infrared soldering processes. In a typical PCB mount application, power dissipation of more than 80W is achievable.
IRLR8103 Features
Low Switching Losses
Low Conduction Losses
Ideal for CPU Core DC-DC Converters
N-Channel Application-Specific MOSFETs
Minimizes Parallel MOSFETs for high current applications
IRLR8103 Applications
Industrial
Automotive
Communications equipment
