STSJ50NH3LL

new-10%

STSJ50NH3LL

Manufacturer part number:STSJ50NH3LL

Manufacturer:STMicroelectronics

Description:MOSFET N-CH 30V 12A 8-PWRSOIC

Case Package:SOT-23

Datasheet:STSJ50NH3LL Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width) Exposed Pad
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	STripFET™
JESD-609 Code	e4
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	NICKEL PALLADIUM GOLD
Additional Feature	LOW THRESHOLD
Subcategory	FET General Purpose Power
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	50A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STSJ50
Pin Count	8
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	3W Ta 50W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	50W
Turn On Delay Time	15 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	10.5m Ω @ 6A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	965pF @ 25V
Current - Continuous Drain (Id) @ 25°C	50A Tc
Gate Charge (Qg) (Max) @ Vgs	12nC @ 4.5V
Rise Time	32ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	8.5 ns
Turn-Off Delay Time	18 ns
Continuous Drain Current (ID)	50A
Gate to Source Voltage (Vgs)	16V
Drain Current-Max (Abs) (ID)	12A
Drain-source On Resistance-Max	0.013Ohm
Drain to Source Breakdown Voltage	30V
Avalanche Energy Rating (Eas)	150 mJ
Height	1.65mm
Length	5mm
Width	4mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free