STT13005D-K datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
STT13005D-K Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
45W
Base Part Number
STT13
Number of Elements
1
Element Configuration
Single
Power Dissipation
45W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 500mA 5V
Current - Collector Cutoff (Max)
250μA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 400mA, 1.6A
Collector Emitter Breakdown Voltage
400V
Collector Emitter Saturation Voltage
1.5V
Emitter Base Voltage (VEBO)
9V
hFE Min
8
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
STT13005D-K Product Details
STT13005D-K Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 500mA 5V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.5V.When VCE saturation is 1.5V @ 400mA, 1.6A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 9V can achieve high levels of efficiency.A maximum collector current of 2A volts can be achieved.
STT13005D-K Features
the DC current gain for this device is 10 @ 500mA 5V a collector emitter saturation voltage of 1.5V the vce saturation(Max) is 1.5V @ 400mA, 1.6A the emitter base voltage is kept at 9V
STT13005D-K Applications
There are a lot of STMicroelectronics STT13005D-K applications of single BJT transistors.