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2SA1827S-AY

2SA1827S-AY

2SA1827S-AY

ON Semiconductor

2SA1827S-AY datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2SA1827S-AY Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 No Tab
Number of Pins 3
Packaging Tape & Reel (TR)
Published 2005
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Subcategory Other Transistors
Max Power Dissipation 1.5W
Operating Temperature (Max) 150°C
Configuration Single
Power - Max 1.5W
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 5V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 100V
Frequency - Transition 180MHz
RoHS Status RoHS Compliant
Lead Free Lead Free
2SA1827S-AY Product Details

2SA1827S-AY Overview


This device has a DC current gain of 100 @ 500mA 5V, which is the ratio between the base current and the collector current.When VCE saturation is 500mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Collector current can be as low as 4A volts at its maximum.

2SA1827S-AY Features


the DC current gain for this device is 100 @ 500mA 5V
the vce saturation(Max) is 500mV @ 200mA, 2A

2SA1827S-AY Applications


There are a lot of ON Semiconductor 2SA1827S-AY applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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