2SA1827S-AY datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SA1827S-AY Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 No Tab
Number of Pins
3
Packaging
Tape & Reel (TR)
Published
2005
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Subcategory
Other Transistors
Max Power Dissipation
1.5W
Operating Temperature (Max)
150°C
Configuration
Single
Power - Max
1.5W
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA 5V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
100V
Frequency - Transition
180MHz
RoHS Status
RoHS Compliant
Lead Free
Lead Free
2SA1827S-AY Product Details
2SA1827S-AY Overview
This device has a DC current gain of 100 @ 500mA 5V, which is the ratio between the base current and the collector current.When VCE saturation is 500mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Collector current can be as low as 4A volts at its maximum.
2SA1827S-AY Features
the DC current gain for this device is 100 @ 500mA 5V the vce saturation(Max) is 500mV @ 200mA, 2A
2SA1827S-AY Applications
There are a lot of ON Semiconductor 2SA1827S-AY applications of single BJT transistors.