STV160NF02LT4

new-10%

Manufacturer part number:STV160NF02LT4

Manufacturer:STMicroelectronics

Description:MOSFET N-CH 20V 160A POWERSO-10

Case Package:SOT-23

Datasheet:STV160NF02LT4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerSO-10 Exposed Bottom Pad
Number of Pins	12
Transistor Element Material	SILICON
Operating Temperature	175°C TJ
Packaging	Cut Tape (CT)
Series	STripFET™ II
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	10
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - annealed
Additional Feature	AVALANCHE RATED
Voltage - Rated DC	20V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Reach Compliance Code	not_compliant
Current Rating	160A
Base Part Number	STV160
Pin Count	10
JESD-30 Code	R-PDSO-G10
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	210W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	210W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.5m Ω @ 80A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4800pF @ 15V
Current - Continuous Drain (Id) @ 25°C	160A Tc
Gate Charge (Qg) (Max) @ Vgs	160nC @ 10V
Rise Time	800ns
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±15V
Fall Time (Typ)	240 ns
Turn-Off Delay Time	80 ns
Continuous Drain Current (ID)	160A
Gate to Source Voltage (Vgs)	15V
Drain-source On Resistance-Max	0.0035Ohm
Drain to Source Breakdown Voltage	20V
Pulsed Drain Current-Max (IDM)	640A
Avalanche Energy Rating (Eas)	1500 mJ
RoHS Status	ROHS3 Compliant