STW2040 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
STW2040 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
125W
Base Part Number
STW2040
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
125W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
500V
Max Collector Current
20A
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 6A 5V
Current - Collector Cutoff (Max)
250μA
Vce Saturation (Max) @ Ib, Ic
500mV @ 1.2A, 6A
Collector Emitter Breakdown Voltage
500V
Emitter Base Voltage (VEBO)
9V
hFE Min
21
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
600
$1.83383
$1100.298
STW2040 Product Details
STW2040 Overview
DC current gain in this device equals 15 @ 6A 5V, which is the ratio of the base current to the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 1.2A, 6A.Keeping the emitter base voltage at 9V allows for a high level of efficiency.A maximum collector current of 20A volts can be achieved.
STW2040 Features
the DC current gain for this device is 15 @ 6A 5V the vce saturation(Max) is 500mV @ 1.2A, 6A the emitter base voltage is kept at 9V
STW2040 Applications
There are a lot of STMicroelectronics STW2040 applications of single BJT transistors.