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STW25NM50N

STW25NM50N

STW25NM50N

STMicroelectronics

STW25NM50N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STW25NM50N Datasheet

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Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series MDmesh™ II
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 140mOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 550V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating 22A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STW25N
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 160W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 160W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 140m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2565pF @ 25V
Current - Continuous Drain (Id) @ 25°C 22A Tc
Gate Charge (Qg) (Max) @ Vgs 84nC @ 10V
Rise Time 23ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 75 ns
Continuous Drain Current (ID) 22A
Threshold Voltage 3V
JEDEC-95 Code TO-247AC
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 88A
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
600 $5.42772 $3256.632
STW25NM50N Product Details

STW25NM50N Description


STW25NM50N is a 500v N-channel MDmesh? II Power MOSFET. This STMicroelectronics STW25NM50N is realized with the second generation of MDmesh? Technology. This revolutionary MOSFET associates a new vertical structure to the Company?ˉs strip layout to yield one of the world?ˉs lowest on-resistance and gate charge. It is, therefore, suitable for the most demanding high-efficiency converters.



STW25NM50N Features


  • 100% avalanche tested

  • Low input capacitance and gate charge

  • Low gate input resistance

  • Drain-source voltage (VGS = 0): 500v

  • Gate- source voltage:  ?à25v



STW25NM50N Applications


  • Rotary Switch

  • DIP Switch

  • Limit Switch

  • Reed Switch

  • Rocker Switch

  • Toggle Switch


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