Welcome to Hotenda.com Online Store!

logo
userjoin
Home

STW34NB20

STW34NB20

STW34NB20

STMicroelectronics

STW34NB20 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STW34NB20 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 45.359237mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Series PowerMESH™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 75mOhm
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating 34A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STW34N
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 180W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 180W
Turn On Delay Time 30 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 75m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 34A Tc
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Rise Time 40ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 18 ns
Continuous Drain Current (ID) 34A
JEDEC-95 Code TO-247AC
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 200V
Avalanche Energy Rating (Eas) 650 mJ
Turn On Time-Max (ton) 95ns
Height 20.15mm
Length 15.75mm
Width 5.15mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
600 $3.91130 $2346.78
STW34NB20 Product Details

STW34NB20 Description


The STMicroelectronics STW50NB20 is a PowerMESHTM MOSFET using the latest high voltage technology, STMicroelectronics has designed an advanced family of power Mosfets with outstanding performances. The new patent-pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.



STW34NB20 Features


  • Typical RDS(ON)=0.062Ω

  • Extremely high dv/dt capabilities

  • 100%  avalanche tested 

  • Very Low intrinsic capacitances

  • Gate charge minimized



STW34NB20 Applications


  • High current, high-speed switching

  • Switch-mode power supplies (SMPS)

  • DC-AC converters for welding

  • Equipment and uninterruptible

  • Power supplies and motor drive


Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News