Name: STW34NB20
Brand: STMicroelectronics
SKU: STW34NB20
Availability: InStock

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STW34NB20

Manufacturer part number:STW34NB20

Manufacturer:STMicroelectronics

Description:STW34NB20 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STW34NB20 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	45.359237mg
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	75mOhm
Terminal Finish	Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Voltage - Rated DC	200V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Current Rating	34A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STW34N
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	180W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	180W
Turn On Delay Time	30 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	75m Ω @ 17A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	34A Tc
Gate Charge (Qg) (Max) @ Vgs	80nC @ 10V
Rise Time	40ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	18 ns
Continuous Drain Current (ID)	34A
JEDEC-95 Code	TO-247AC
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	200V
Avalanche Energy Rating (Eas)	650 mJ
Turn On Time-Max (ton)	95ns
Height	20.15mm
Length	15.75mm
Width	5.15mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STW34NB20 Product Details

STW34NB20 Description

The STMicroelectronics STW50NB20 is a PowerMESHTM MOSFET using the latest high voltage technology, STMicroelectronics has designed an advanced family of power Mosfets with outstanding performances. The new patent-pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest R_DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.