STW34NB20 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
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STW34NB20 Datasheet
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In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
45.359237mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Series
PowerMESH™
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
75mOhm
Terminal Finish
Tin (Sn)
Additional Feature
AVALANCHE RATED
Subcategory
FET General Purpose Power
Voltage - Rated DC
200V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Current Rating
34A
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STW34N
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
180W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
180W
Turn On Delay Time
30 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
75m Ω @ 17A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3300pF @ 25V
Current - Continuous Drain (Id) @ 25°C
34A Tc
Gate Charge (Qg) (Max) @ Vgs
80nC @ 10V
Rise Time
40ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
18 ns
Continuous Drain Current (ID)
34A
JEDEC-95 Code
TO-247AC
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
200V
Avalanche Energy Rating (Eas)
650 mJ
Turn On Time-Max (ton)
95ns
Height
20.15mm
Length
15.75mm
Width
5.15mm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
600
$3.91130
$2346.78
STW34NB20 Product Details
STW34NB20 Description
The STMicroelectronics STW50NB20 is a PowerMESHTM MOSFET using the latest high voltage technology, STMicroelectronics has designed an advanced family of power Mosfets with outstanding performances. The new patent-pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.