Welcome to Hotenda.com Online Store!

logo
userjoin
Home

NP55N03SUG-E1-AY

NP55N03SUG-E1-AY

NP55N03SUG-E1-AY

Renesas Electronics America

MOSFET N-CH 30V 55A TO-252

SOT-23

NP55N03SUG-E1-AY Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Operating Temperature 175°C TJ
Packaging Tape & Reel (TR)
Published 2008
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.2W Ta 77W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.2W
Case Connection DRAIN
Turn On Delay Time 32 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5m Ω @ 28A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 55A Tc
Gate Charge (Qg) (Max) @ Vgs 93nC @ 10V
Rise Time 52ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 73 ns
Continuous Drain Current (ID) 55A
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.005Ohm
Pulsed Drain Current-Max (IDM) 220A
DS Breakdown Voltage-Min 30V
Radiation Hardening No
RoHS Status ROHS3 Compliant

Related Part Number

SI4752DY-T1-GE3
IRF3805S
STW16NM50N
STD3NM50T4
STW6N120K3
MCH3382-TL-W
SI7459DP-T1-E3
IRF9Z24NS

Get Subscriber

Enter Your Email Address, Get the Latest News