STY112N65M5

new-10%

Manufacturer part number:STY112N65M5

Manufacturer:STMicroelectronics

Description:MOSFET (Metal Oxide) N-Channel Tube 22m Ω @ 47A, 10V ±25V 16870pF @ 100V 350nC @ 10V 650V TO-247-3

Case Package:SOT-23

Datasheet:STY112N65M5 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	MDmesh™ V
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	22MOhm
Terminal Finish	Tin (Sn)
Additional Feature	AVALANCHE ENERGY RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Base Part Number	STY112
Pin Count	3
Number of Elements	1
Power Dissipation-Max	625W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	625W
Turn On Delay Time	267 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	22m Ω @ 47A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	16870pF @ 100V
Current - Continuous Drain (Id) @ 25°C	96A Tc
Gate Charge (Qg) (Max) @ Vgs	350nC @ 10V
Rise Time	79ns
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	140 ns
Turn-Off Delay Time	53 ns
Continuous Drain Current (ID)	96A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	710V
Height	20.3mm
Length	5.9mm
Width	5.3mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free