VP2206N3-G-P003

new-10%

Manufacturer part number:VP2206N3-G-P003

Manufacturer:Microchip Technology

Description:MOSFET,P-CHANNEL ENHANCEMENT-MODE,-60V,0.9 Ohm3 TO-92T/R

Case Package:SOT-23

Datasheet:VP2206N3-G-P003 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins	3
Weight	453.59237mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	740mW Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1W
Turn On Delay Time	4 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	900m Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id	3.5V @ 10mA
Input Capacitance (Ciss) (Max) @ Vds	450pF @ 25V
Current - Continuous Drain (Id) @ 25°C	640mA Tj
Rise Time	16ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	22 ns
Turn-Off Delay Time	16 ns
Continuous Drain Current (ID)	640mA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.64A
Drain-source On Resistance-Max	0.9Ohm
DS Breakdown Voltage-Min	60V
Feedback Cap-Max (Crss)	40 pF
Height	5.33mm
Length	5.21mm
Width	4.19mm
RoHS Status	ROHS3 Compliant