BRIDGE RECTIFIER DIODE SILICON NOT SPECIFIED SINGLE Tube
SOT-23
GBU807-K D2G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Surface Mount
NO
Diode Element Material
SILICON
Number of Terminals
4
ECCN (US)
EAR99
Bridge Type
Single Phase
Peak Reverse Repetitive Voltage (V)
1000
Peak Average Forward Current (A)
8
Peak RMS Reverse Voltage (V)
700
Peak Non-Repetitive Forward Surge Current (A)
200
Peak Forward Voltage (V)
1.1
Peak Reverse Current (uA)
5
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
AEC Qualified
No
Supplier Package
Case GBU
Military
No
Mounting
Through Hole
Package Height
18.8(Max)
Package Length
22.3(Max)
Package Width
3.56(Max)
PCB changed
4
Manufacturer
TAIWAN SEMICONDUCTOR
Package Shape
RECTANGULAR
Packaging
Tube
JESD-609 Code
e3
Part Status
Active
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
UL RECOGNIZED
Terminal Position
SINGLE
Terminal Form
THROUGH-HOLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
Pin Count
4
JESD-30 Code
R-PSFM-T4
Number of Elements
4
Configuration
Single
Diode Type
BRIDGE RECTIFIER DIODE
Case Connection
ISOLATED
Output Current-Max
8 A
Number of Phases
1
Rep Pk Reverse Voltage-Max
1000 V
Non-rep Pk Forward Current-Max
200 A
Breakdown Voltage-Min
1000 V
RoHS Status
Yes with exemptions
GBU807-K D2G Product Details
GBU807-K D2G Overview
According to the datasheets, the peak forward voltage is 1.1.With the peak RMS reverse voltage range of 700, this device can operate efficiently.Occasionally, this device may run at its lowest possible breakdown voltage of 1000 V.Diode can read a maximum output current voltage of 8 A using this device.
GBU807-K D2G Features
the forward peak voltage is 1.1 the peak RMS reverse voltage range of 700 at its lowest breakdown voltage of 1000 V a maximum output current voltage of 8 A
GBU807-K D2G Applications
There are a lot of Taiwan Semiconductor GBU807-K D2G applications of RF diodes.