BRIDGE RECTIFIER DIODE SILICON 250 DUAL Tape and Reel
SOT-23
MBS10-T RCG Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Surface Mount
YES
Diode Element Material
SILICON
Number of Terminals
4
Bridge Type
Single Phase
Peak Reverse Repetitive Voltage (V)
1000
Peak Average Forward Current (A)
0.8
Peak RMS Reverse Voltage (V)
700
Peak Non-Repetitive Forward Surge Current (A)
35
Peak Forward Voltage (V)
[email protected]
Peak Reverse Current (uA)
5
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Supplier Package
Case MBS
Military
No
Mounting
Surface Mount
Package Height
2.7(Max)
Package Length
4.9(Max)
Package Width
5(Max)
PCB changed
4
Package Shape
RECTANGULAR
Manufacturer
Taiwan Semiconductor
Packaging
Tape and Reel
JESD-609 Code
e3
Part Status
Obsolete
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
250
Reach Compliance Code
compliant
Pin Count
4
JESD-30 Code
R-PDSO-G4
Number of Elements
4
Configuration
Single
Diode Type
BRIDGE RECTIFIER DIODE
Output Current-Max
0.5 A
Number of Phases
1
Rep Pk Reverse Voltage-Max
1000 V
Non-rep Pk Forward Current-Max
35 A
Breakdown Voltage-Min
1000 V
MBS10-T RCG Product Details
MBS10-T RCG Overview
In accordance with the datasheets, the forward peak voltage is [email protected] effective reverse voltage range of 700 is provided by this device.This device may operate at its lowest breakdown voltage of 1000 V on occasion.This device is capable of reading a maximum output current voltage of 0.5 A.
MBS10-T RCG Features
the forward peak voltage is [email protected] the peak RMS reverse voltage range of 700 at its lowest breakdown voltage of 1000 V a maximum output current voltage of 0.5 A
MBS10-T RCG Applications
There are a lot of Taiwan Semiconductor MBS10-T RCG applications of RF diodes.