BC338-25 B1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website
SOT-23
BC338-25 B1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
24 Weeks
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2014
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
625mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
25V
Current - Collector (Ic) (Max)
800mA
Frequency - Transition
100MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
BC338-25 B1G Product Details
BC338-25 B1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 160 @ 100mA 5V.When VCE saturation is 700mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).TO-92 is the supplier device package for this product.There is a 25V maximal voltage in the device due to collector-emitter breakdown.
BC338-25 B1G Features
the DC current gain for this device is 160 @ 100mA 5V the vce saturation(Max) is 700mV @ 50mA, 500mA the supplier device package of TO-92
BC338-25 B1G Applications
There are a lot of Taiwan Semiconductor Corporation BC338-25 B1G applications of single BJT transistors.