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BC338-25 B1G

BC338-25 B1G

BC338-25 B1G

Taiwan Semiconductor Corporation

BC338-25 B1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website

SOT-23

BC338-25 B1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 24 Weeks
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 625mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 25V
Current - Collector (Ic) (Max) 800mA
Frequency - Transition 100MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
BC338-25 B1G Product Details

BC338-25 B1G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 160 @ 100mA 5V.When VCE saturation is 700mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).TO-92 is the supplier device package for this product.There is a 25V maximal voltage in the device due to collector-emitter breakdown.

BC338-25 B1G Features


the DC current gain for this device is 160 @ 100mA 5V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the supplier device package of TO-92

BC338-25 B1G Applications


There are a lot of Taiwan Semiconductor Corporation BC338-25 B1G applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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