DBL106G C1G datasheet pdf and Diodes - Bridge Rectifiers product details from Taiwan Semiconductor Corporation stock available on our website
SOT-23
DBL106G C1G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Mounting Type
Through Hole
Package / Case
4-DIP (0.300, 7.62mm)
Surface Mount
NO
Diode Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2015
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
UL RECOGNIZED
Technology
Standard
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PDIP-T4
Number of Elements
4
Configuration
BRIDGE, 4 ELEMENTS
Diode Type
Single Phase
Current - Reverse Leakage @ Vr
2μA @ 800V
Voltage - Forward (Vf) (Max) @ If
1.1V @ 15A
Output Current-Max
1A
Current - Average Rectified (Io)
1A
Number of Phases
1
Non-rep Pk Forward Current-Max
50A
Voltage - Peak Reverse (Max)
800V
Breakdown Voltage-Min
800V
RoHS Status
ROHS3 Compliant
DBL106G C1G Product Details
DBL106G C1G Overview
Electronic components in the 4-DIP (0.300, 7.62mm) package are basically the same.At -55°C~150°C TJ, it operates normally.Bridge rectifier can support a maximum output voltage of 1A.
DBL106G C1G Features
4-DIP (0.300, 7.62mm) package operating at a temperature of -55°C~150°C TJ the maximum output voltage of 1A
DBL106G C1G Applications
There are a lot of Taiwan Semiconductor Corporation DBL106G C1G applications of bridge rectifiers.
High temperature and rectifiers
Aviation – Standby power distribution, resistive heating
Military and other high-reliability applications
Fuse-in-glass diodes design
SCR and diode based input rectifiers
Inductive heating – Input rectifiers
Controlled avalanche characteristics
Mining – SCR power bridges, solid state starters and input rectifiers