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MUR460S R7G

MUR460S R7G

MUR460S R7G

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 4A DO214AB

SOT-23

MUR460S R7G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 17 Weeks
Mounting Type Surface Mount
Package / Case DO-214AB, SMC
Surface Mount YES
Diode Element Material SILICON
Packaging Digi-Reel®
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code 8541.10.00.80
Terminal Position DUAL
Terminal Form C BEND
JESD-30 Code R-PDSO-C2
Operating Temperature (Max) 175°C
Number of Elements 1
Configuration SINGLE
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 10μA @ 600V
Voltage - Forward (Vf) (Max) @ If 1.25V @ 4A
Operating Temperature - Junction -55°C~175°C
Output Current-Max 4A
Application EFFICIENCY
Voltage - DC Reverse (Vr) (Max) 600V
Current - Average Rectified (Io) 4A
Number of Phases 1
Reverse Recovery Time 50ns
Rep Pk Reverse Voltage-Max 600V
Capacitance @ Vr, F 65pF @ 4V 1MHz
Non-rep Pk Forward Current-Max 75A
Reverse Current-Max 10μA
RoHS Status ROHS3 Compliant

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