TSC5802DCP ROG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website
SOT-23
TSC5802DCP ROG Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
24 Weeks
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
TO-252, (D-Pak)
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2014
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Power - Max
30W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 100mA 5V
Current - Collector Cutoff (Max)
250μA
Vce Saturation (Max) @ Ib, Ic
3V @ 600mA, 2A
Voltage - Collector Emitter Breakdown (Max)
450V
Current - Collector (Ic) (Max)
2.5A
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
TSC5802DCP ROG Product Details
TSC5802DCP ROG Overview
This device has a DC current gain of 50 @ 100mA 5V, which is the ratio between the collector current and the base current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 600mA, 2A.The product comes in the supplier device package of TO-252, (D-Pak).Single BJT transistor shows a 450V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
TSC5802DCP ROG Features
the DC current gain for this device is 50 @ 100mA 5V the vce saturation(Max) is 3V @ 600mA, 2A the supplier device package of TO-252, (D-Pak)
TSC5802DCP ROG Applications
There are a lot of Taiwan Semiconductor Corporation TSC5802DCP ROG applications of single BJT transistors.