TSC5804DCP ROG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website
SOT-23
TSC5804DCP ROG Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
24 Weeks
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
TO-252, (D-Pak)
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2014
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Power - Max
45W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 200mA 3V
Current - Collector Cutoff (Max)
250μA
Vce Saturation (Max) @ Ib, Ic
2V @ 1A, 3.5A
Voltage - Collector Emitter Breakdown (Max)
450V
Current - Collector (Ic) (Max)
5A
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
TSC5804DCP ROG Product Details
TSC5804DCP ROG Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 25 @ 200mA 3V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Supplier package TO-252, (D-Pak) contains the product.Device displays Collector Emitter Breakdown (450V maximal voltage).
TSC5804DCP ROG Features
the DC current gain for this device is 25 @ 200mA 3V the vce saturation(Max) is 2V @ 1A, 3.5A the supplier device package of TO-252, (D-Pak)
TSC5804DCP ROG Applications
There are a lot of Taiwan Semiconductor Corporation TSC5804DCP ROG applications of single BJT transistors.