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TSC5804DCP ROG

TSC5804DCP ROG

TSC5804DCP ROG

Taiwan Semiconductor Corporation

TSC5804DCP ROG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website

SOT-23

TSC5804DCP ROG Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Factory Lead Time 24 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package TO-252, (D-Pak)
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Power - Max 45W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 200mA 3V
Current - Collector Cutoff (Max) 250μA
Vce Saturation (Max) @ Ib, Ic 2V @ 1A, 3.5A
Voltage - Collector Emitter Breakdown (Max) 450V
Current - Collector (Ic) (Max) 5A
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
TSC5804DCP ROG Product Details

TSC5804DCP ROG Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 25 @ 200mA 3V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Supplier package TO-252, (D-Pak) contains the product.Device displays Collector Emitter Breakdown (450V maximal voltage).

TSC5804DCP ROG Features


the DC current gain for this device is 25 @ 200mA 3V
the vce saturation(Max) is 2V @ 1A, 3.5A
the supplier device package of TO-252, (D-Pak)

TSC5804DCP ROG Applications


There are a lot of Taiwan Semiconductor Corporation TSC5804DCP ROG applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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