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TSC5804DCP ROG

TSC5804DCP ROG

TSC5804DCP ROG

Taiwan Semiconductor Corporation

TSC5804DCP ROG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website

SOT-23

TSC5804DCP ROG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 24 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package TO-252, (D-Pak)
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Power - Max 45W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 200mA 3V
Current - Collector Cutoff (Max) 250μA
Vce Saturation (Max) @ Ib, Ic 2V @ 1A, 3.5A
Voltage - Collector Emitter Breakdown (Max) 450V
Current - Collector (Ic) (Max) 5A
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
5,000 $0.28804 $1.4402
TSC5804DCP ROG Product Details

TSC5804DCP ROG Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 25 @ 200mA 3V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Supplier package TO-252, (D-Pak) contains the product.Device displays Collector Emitter Breakdown (450V maximal voltage).

TSC5804DCP ROG Features


the DC current gain for this device is 25 @ 200mA 3V
the vce saturation(Max) is 2V @ 1A, 3.5A
the supplier device package of TO-252, (D-Pak)

TSC5804DCP ROG Applications


There are a lot of Taiwan Semiconductor Corporation TSC5804DCP ROG applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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