TSC5804DCP ROG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website
SOT-23
TSC5804DCP ROG Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
24 Weeks
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
TO-252, (D-Pak)
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2014
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Power - Max
45W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 200mA 3V
Current - Collector Cutoff (Max)
250μA
Vce Saturation (Max) @ Ib, Ic
2V @ 1A, 3.5A
Voltage - Collector Emitter Breakdown (Max)
450V
Current - Collector (Ic) (Max)
5A
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
5,000
$0.28804
$1.4402
TSC5804DCP ROG Product Details
TSC5804DCP ROG Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 25 @ 200mA 3V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Supplier package TO-252, (D-Pak) contains the product.Device displays Collector Emitter Breakdown (450V maximal voltage).
TSC5804DCP ROG Features
the DC current gain for this device is 25 @ 200mA 3V the vce saturation(Max) is 2V @ 1A, 3.5A the supplier device package of TO-252, (D-Pak)
TSC5804DCP ROG Applications
There are a lot of Taiwan Semiconductor Corporation TSC5804DCP ROG applications of single BJT transistors.