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TSM10N60CI C0G

  • TSM10N60CI C0G
  • TSM10N60CI C0G

TSM10N60CI C0G

TSM10N60CI C0G

Taiwan Semiconductor Corporation

MOSFET (Metal Oxide) N-Channel 750mOhm @ 5A, 10V ±30V 1738pF @ 25V 45.8nC @ 10V 600V TO-220-3 Full Pack, Isolated Tab

SOT-23

TSM10N60CI C0G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab
Supplier Device Package ITO-220
Operating Temperature -55°C~150°C TJ
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 50W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 750mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1738pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Gate Charge (Qg) (Max) @ Vgs 45.8nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RoHS Status ROHS3 Compliant
TSM10N60CI C0G Product Details

TSM10N60CI C0G Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1738pF @ 25V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.

TSM10N60CI C0G Features


a 600V drain to source voltage (Vdss)


TSM10N60CI C0G Applications


There are a lot of Taiwan Semiconductor Corporation
TSM10N60CI C0G applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification

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