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SPA07N60C3

SPA07N60C3

SPA07N60C3

Infineon Technologies AG

SOT-23

SPA07N60C3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Surface Mount NO
Number of Terminals 3
Transistor Element Material SILICON
Pbfree Code icon-pbfree yes
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 4.3A
Drain-source On Resistance-Max 0.6Ohm
Pulsed Drain Current-Max (IDM) 21.9A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 230 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 32W
RoHS Status RoHS Compliant
SPA07N60C3 Product Details

SPA07N60C3 Description


SPA07N60C3 is a 650V CoolMOS? N-channel Power MOSFET featuring ultra-low gate charge. The Infineon SPA07N60C3 is suitable for server, telecom, PC Power and adapter applications. The Operating and Storage Temperature Range is between -55 and 150℃. And the MOSFET SPA07N60C3 is in the TO-220FP-3 package with 32W power dissipation.



SPA07N60C3 Features


  • New revolutionary high voltage technology

  • Extreme dV/dt rated

  • High peak current capability

  • Qualified according to JEDEC for target applications

  • Ultra-low effective capacitance

  • Fully isolated package

  • Low specific ON-state resistance

  • Field-proven CoolMOS? quality



SPA07N60C3 Applications


  • Server

  • Telecom

  • Consumer

  • PC power

  • Adapter


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