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TSM10N80CZ C0G

  • TSM10N80CZ C0G
  • TSM10N80CZ C0G

TSM10N80CZ C0G

TSM10N80CZ C0G

Taiwan Semiconductor Corporation

MOSFET (Metal Oxide) N-Channel Tube 1.05 Ω @ 4.75A, 10V ±30V 2336pF @ 25V 53nC @ 10V 800V TO-220-3

SOT-23

TSM10N80CZ C0G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 24 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 290W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.05 Ω @ 4.75A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2336pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9.5A Tc
Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.36000 $3.36
10 $3.00000 $30
100 $2.45980 $245.98
500 $1.99184 $995.92
1,000 $1.67986 $1.67986
TSM10N80CZ C0G Product Details

TSM10N80CZ C0G Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2336pF @ 25V.Operating this transistor requires a 800V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

TSM10N80CZ C0G Features


a 800V drain to source voltage (Vdss)


TSM10N80CZ C0G Applications


There are a lot of Taiwan Semiconductor Corporation
TSM10N80CZ C0G applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools

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