IPB072N15N3GE8187ATMA1

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Manufacturer part number:IPB072N15N3GE8187ATMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 150V 100A TO263-3

Case Package:SOT-23

Datasheet:IPB072N15N3GE8187ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	OptiMOS™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	300W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	7.2m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 270μA
Input Capacitance (Ciss) (Max) @ Vds	5470pF @ 75V
Current - Continuous Drain (Id) @ 25°C	100A Tc
Gate Charge (Qg) (Max) @ Vgs	93nC @ 10V
Drain to Source Voltage (Vdss)	150V
Drive Voltage (Max Rds On,Min Rds On)	8V 10V
Vgs (Max)	±20V