SUD06N10-225L-GE3

new-10%

Manufacturer part number:SUD06N10-225L-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 100V [email protected] 6.5A N-CH

Case Package:SOT-23

Datasheet:SUD06N10-225L-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Weight	1.437803g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1995
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	200mOhm
Terminal Finish	Matte Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	SUD06N10
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.25W Ta 16.7W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	7 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	200m Ω @ 3A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	240pF @ 25V
Current - Continuous Drain (Id) @ 25°C	6.5A Tc
Gate Charge (Qg) (Max) @ Vgs	4nC @ 5V
Rise Time	8ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	9 ns
Turn-Off Delay Time	8 ns
Continuous Drain Current (ID)	6.5A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	8A
Height	2.38mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free